Infineon Technologies AGIPB80N06S407ATMA2MOSFET
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 80 | |
| 100 | |
| 1 | |
| 7.1@10V | |
| 43@10V | |
| 43 | |
| 3460@25V | |
| 79000 | |
| 5 | |
| 3 | |
| 23 | |
| 15 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| 5.9@10V|6.2@10V | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.4 mm |
| Largeur du paquet | 9.25 mm |
| Longueur du paquet | 10 mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
This IPB80N06S407ATMA2 power MOSFET from Infineon Technologies can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 79000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with optimos-t2 technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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