Infineon Technologies AGIPB020N10N5ATMA1MOSFET
Trans MOSFET N-CH 100V 176A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| IPB020N10N5ATMA1 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| 20 | |
| 3.8 | |
| 176 | |
| 100 | |
| 7 | |
| 2@10V | |
| 168@10V | |
| 168 | |
| 12000@50V | |
| 375000 | |
| 29 | |
| 26 | |
| 77 | |
| 33 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 1.7@10V|2@6V | |
| 480 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.57(Max) mm |
| Largeur du paquet | 9.45(Max) mm |
| Longueur du paquet | 10.31(Max) mm |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 3 | |
| Forme de sonde | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies' IPB020N10N5ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 375000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos 5 technology.
| EDA / CAD Models |
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