Infineon Technologies AGIPB011N04LGATMA1MOSFET
Trans MOSFET N-CH 40V 180A 7-Pin(6+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| IPB011N04LGATMA1 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quint Source | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2 | |
| 180 | |
| 1.1@10V | |
| 260@10V | |
| 260 | |
| 22000@20V | |
| 250000 | |
| 21 | |
| 13 | |
| 106 | |
| 25 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.57(Max) mm |
| Largeur du paquet | 9.45(Max) mm |
| Longueur du paquet | 10.31(Max) mm |
| Carte électronique changée | 6 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | D2PAK |
| 7 | |
| Forme de sonde | Gull-wing |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPB011N04LGATMA1 power MOSFET. Its maximum power dissipation is 250000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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