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Infineon Technologies AGIPA180N10N3GXKSA1MOSFET
Trans MOSFET N-CH 100V 28A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 28 | |
| 18@10V | |
| 19@10V | |
| 19 | |
| 1350@50V | |
| 30000 | |
| 3 | |
| 5 | |
| 18 | |
| 11 | |
| -55 | |
| 175 | |
| Tube | |
| 15.5@10V|19.2@6V | |
| Installation | Through Hole |
| Hauteur du paquet | 16 mm |
| Largeur du paquet | 4.7 mm |
| Longueur du paquet | 10.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
This IPA180N10N3GXKSA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 30000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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