Infineon Technologies AGIPA057N08N3GXKSA1MOSFET
Trans MOSFET N-CH 80V 60A 3-Pin(3+Tab) TO-220FP Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.5 | |
| 60 | |
| 5.7@10V | |
| 52@10V | |
| 52 | |
| 3570@40V | |
| 39000 | |
| 9 | |
| 42 | |
| 36 | |
| 17 | |
| -55 | |
| 175 | |
| Tube | |
| 4.9@10V|6.3@6V | |
| Installation | Through Hole |
| Hauteur du paquet | 16 mm |
| Largeur du paquet | 4.7 mm |
| Longueur du paquet | 10.5 mm |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220FP |
| 3 | |
| Forme de sonde | Through Hole |
Create an effective common drain amplifier using this IPA057N08N3GXKSA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 39000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology.
| EDA / CAD Models |
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