STMicroelectronicsHD1750FXGP BJT
Trans GP BJT NPN 800V 24A 75000mW 3-Pin(3+Tab) ISOWATT218FX Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.75 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 800 | |
| 10 | |
| 1.5@3A@12A | |
| 3@3A@12A | |
| 24 | |
| 6.5@12A@5V | |
| 75000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 16.5(Max) |
| Largeur du paquet | 5.7(Max) |
| Longueur du paquet | 15.7(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | ISOWATT218FX |
| 3 |
Implement this versatile NPN HD1750FX GP BJT from STMicroelectronics into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 10 V. Its maximum power dissipation is 75000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It has a maximum collector emitter voltage of 800 V and a maximum emitter base voltage of 10 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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