25-50% de réduction
Diodes IncorporatedFCX596TAGP BJT
Trans GP BJT PNP 200V 0.3A 1000mW 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 220 | |
| 200 | |
| 5 | |
| 1@25mA@250mA | |
| 0.2@10mA@100mA|0.35@25mA@250mA | |
| 0.3 | |
| 100 | |
| 100@1mA@10V|100@100mA@10V|85@250mA@10V|35@400mA@10V | |
| 1000 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5 |
| Largeur du paquet | 2.5 |
| Longueur du paquet | 4.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-89 |
| 4 | |
| Forme de sonde | Flat |
Add switching and amplifying capabilities to your electronic circuit with this PNP FCX596TA GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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