Microchip TechnologyDN3535N8-GMOSFET
Trans MOSFET N-CH Si 350V 0.23A 4-Pin(3+Tab) SOT-89 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Dual Drain | |
| Depletion | |
| N | |
| 1 | |
| 350 | |
| ±20 | |
| 0.23 | |
| 100 | |
| 10000@0V | |
| 360(Max)@25V | |
| 1600 | |
| 30(Max) | |
| 20(Max) | |
| 20(Max) | |
| 15(Max) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.6(Max) |
| Largeur du paquet | 2.6(Max) |
| Longueur du paquet | 4.6(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-89 |
| 4 |
Compared to traditional transistors, DN3535N8-G power MOSFETs, developed by Microchip Technology, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1600 mW. This N channel MOSFET transistor operates in depletion mode. This device utilizes dmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.