Microchip TechnologyDN2625DK6-GMOSFET
Trans MOSFET N-CH Si 250V 1.1A 8-Pin DFN EP Tray
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Si | |
| Single Quad Drain Triple Source | |
| Depletion | |
| N | |
| 1 | |
| 250 | |
| ±20 | |
| 1.1 | |
| 100 | |
| 1100000(Min) | |
| 3500@0V | |
| 7.04(Max)@1.5V | |
| 800@25V | |
| 20(Max) | |
| 20(Max) | |
| 10(Max) | |
| 10(Max) | |
| -55 | |
| 150 | |
| Tray | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.85(Max) |
| Largeur du paquet | 5 |
| Longueur du paquet | 5 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | DFN EP |
| 8 | |
| Forme de sonde | No Lead |
Create an effective common drain amplifier using this DN2625DK6-G power MOSFET from Microchip Technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with dmos technology. This N channel MOSFET transistor operates in depletion mode.
| EDA / CAD Models |
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