| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 50 | |
| ±8 | |
| 1.2 | |
| 0.2 | |
| 1000 | |
| 10 | |
| 6000@4V | |
| 0.58@4.5V | |
| 50.54@25V | |
| 425 | |
| 15 | |
| 6.63 | |
| 21.9 | |
| 4.46 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.47 |
| Largeur du paquet | 1 |
| Longueur du paquet | 0.6 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | X1-DFN |
| 3 |
Create an effective common drain amplifier using this DMP56D0UFB-7B power MOSFET from Diodes Zetex. Its maximum power dissipation is 425 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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