| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Triple Drain Dual Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 9.2 | |
| 16@4.5V | |
| 53@4.5V|113@10V | |
| 113 | |
| 4748@10V | |
| 2100 | |
| 100.6 | |
| 29.8 | |
| 240.8 | |
| 22.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.58 |
| Largeur du paquet | 2.3 |
| Longueur du paquet | 2.5 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | UDFN EP |
| 6 | |
| Forme de sonde | No Lead |
This DMP2018LFK-7 power MOSFET from Diodes Zetex can be used for amplification in your circuit. Its maximum power dissipation is 2100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.

