| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±25 | |
| 1.6 | |
| 8.6 | |
| 100 | |
| 1 | |
| 14@10V | |
| 8.7@5V | |
| 798@10V | |
| 1700 | |
| 8.55 | |
| 4.5 | |
| 26.33 | |
| 5.03 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.45 |
| Largeur du paquet | 3.9 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SO |
| 8 | |
| Forme de sonde | Gull-wing |
Use Diodes Zetex's DMN4800LSS-13 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1700 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
Des dispositifs médicaux alimentés par l'IA
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