| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±10 | |
| 0.23 | |
| 3000@4.5V | |
| 14.1@15V | |
| 300 | |
| 15.2 | |
| 7.9 | |
| 13.4 | |
| 3.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75 mm |
| Largeur du paquet | 0.8 mm |
| Longueur du paquet | 1.6 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-523 |
| 3 | |
| Forme de sonde | Gull-wing |
This DMN26D0UT-7 power MOSFET from Diodes Zetex can be used for amplification in your circuit. Its maximum power dissipation is 300 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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