| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 1.5 | |
| 1000 | |
| 0.1 | |
| 400@4.5V | |
| 1.1@4.5V|2@10V | |
| 2 | |
| 82@16V | |
| 1200 | |
| 17.3 | |
| 6.4 | |
| 40.4 | |
| 6.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.35(Max) |
| Largeur du paquet | 1 |
| Longueur du paquet | 0.6 |
| Carte électronique changée | 3 |
| Nom de lemballage standard | DFN |
| Conditionnement du fournisseur | X2-DFN |
| 3 | |
| Forme de sonde | No Lead |
Use Diodes Zetex's DMN2501UFB4-7 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Des systèmes de drones plus intelligents
Équipez-vous d'outils puissants et de stratégies intelligentes pour concevoir les systèmes de drones agiles, efficaces et modulaires de demain.