| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±25 | |
| 10 | |
| 23@10V | |
| 10.5@10V|5@4.5V | |
| 10.5 | |
| 478.9@15V | |
| 1420 | |
| 3.1 | |
| 7.9 | |
| 14.6 | |
| 2.9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.45 mm |
| Largeur du paquet | 3.9 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SO |
| 8 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this DMG4466SSS-13 power MOSFET from Diodes Zetex. Its maximum power dissipation is 1420 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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