| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Si | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 70 | |
| ±20 | |
| 20(Min) | |
| 5 | |
| 1000(Typ)@20V | |
| 60(Max)@28V | |
| 50000 | |
| 20 | |
| 16(Min) | |
| 175 | |
| 1 | |
| 50(Min) | |
| -65 | |
| 200 | |
| Installation | Screw |
| Hauteur du paquet | 6.6 mm |
| Largeur du paquet | 9.52 mm |
| Longueur du paquet | 24.76 mm |
| Carte électronique changée | 4 |
| Conditionnement du fournisseur | Case DA |
| 4 |
If you need a MOSFET for radio frequency environments, Semelab (TT electronics) offers this D1001UK RF amplifier that amplifies and switches between electronic signals. Its maximum power dissipation is 50000 mW. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 175 MHz.
| EDA / CAD Models |
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