| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 60 | |
| ±20 | |
| -55 to 150 | |
| 15 | |
| 15@10V | |
| 14@10V | |
| 14 | |
| 1080@30V | |
| 2100 | |
| 19 | |
| 15 | |
| 5 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.5(Max) |
| Largeur du paquet | 3.98(Max) |
| Longueur du paquet | 5(Max) |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SO |
| Conditionnement du fournisseur | SOIC |
| 8 | |
| Forme de sonde | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments' CSD88537ND power MOSFET can provide a solution. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology.
| EDA / CAD Models |
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