| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1.1 | |
| 20 | |
| 100 | |
| 1 | |
| 23.9@4.5V | |
| 3.6@4.5V | |
| 0.5 | |
| 504@10V | |
| 2900 | |
| 5 | |
| 15 | |
| 15 | |
| 8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.85 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.75 mm |
| Largeur du paquet | 2 mm |
| Longueur du paquet | 2 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | WSON EP |
| 6 | |
| Forme de sonde | No Lead |
As an alternative to traditional transistors, the CSD25310Q2 power MOSFET from Texas Instruments can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2900 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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