| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| -6 | |
| 3.2 | |
| 33@4.5V | |
| 3.4@4.5V | |
| 0.2 | |
| 475@10V | |
| 1000 | |
| 14.2 | |
| 8.8 | |
| 36.9 | |
| 13.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.65 |
| Largeur du paquet | 1.8 |
| Longueur du paquet | 1.3 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | DSBGA |
| 6 | |
| Forme de sonde | Ball |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments' CSD25211W1015 power MOSFET can provide a solution. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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