| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.40 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Quad Source | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| -6 | |
| 1.05 | |
| -55 to 150 | |
| 4 | |
| 100 | |
| 1 | |
| 26@4.5V | |
| 5.8@4.5V | |
| 0.8 | |
| 1.1 | |
| 19 | |
| 778@10V | |
| 21@10V | |
| 0.45 | |
| 400 | |
| 500 | |
| 28 | |
| 12 | |
| 64 | |
| 15 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 40@1.8V|26@2.5V|21@4.5V | |
| 38 | |
| 220(Typ) | |
| 0.75 | |
| 1.4 | |
| 26 | |
| 1 | |
| 0.75 | |
| 6 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.28(Max) |
| Largeur du paquet | 1.5 |
| Longueur du paquet | 1.5 |
| Carte électronique changée | 9 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | DSBGA |
| 9 | |
| Forme de sonde | Ball |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the CSD25202W15 power MOSFET, developed by Texas Instruments. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology.
| EDA / CAD Models |
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