| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| ±8 | |
| 1.1 | |
| 3.5 | |
| 10000 | |
| 1 | |
| 76@4.5V | |
| 1.04@4.5V | |
| 0.15 | |
| 180@6V | |
| 500 | |
| 41 | |
| 25 | |
| 66 | |
| 28 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.35(Max) |
| Largeur du paquet | 1.04(Max) |
| Longueur du paquet | 0.64(Max) |
| Carte électronique changée | 3 |
| Conditionnement du fournisseur | PicoStar |
| 3 |
This CSD23382F4T power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 500 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode. This device is made with femtofet technology.
| EDA / CAD Models |
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