| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| Small Signal | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 12 | |
| -8 | |
| 1.2 | |
| 2.3 | |
| 50 | |
| 0.1 | |
| 175@4.5V | |
| 1.14@4.5V | |
| 0.19 | |
| 236@6V | |
| 500 | |
| 7 | |
| 3.9 | |
| 18 | |
| 4.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.95 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.35(Max) |
| Largeur du paquet | 1.04(Max) |
| Longueur du paquet | 0.64(Max) |
| Carte électronique changée | 3 |
| Conditionnement du fournisseur | PicoStar |
| 3 |
Create an effective common drain amplifier using this CSD23381F4T power MOSFET from Texas Instruments. Its maximum power dissipation is 500 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with femtofet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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