| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain Triple Source | |
| Enhancement | |
| P | |
| 1 | |
| 8 | |
| -6 | |
| 1.1 | |
| 3 | |
| 100 | |
| 1 | |
| 19.4@4.5V | |
| 4.9@4.5V | |
| 0.6 | |
| 703@4V | |
| 750 | |
| 27 | |
| 12 | |
| 58 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.28(Max) |
| Largeur du paquet | 1 |
| Longueur du paquet | 1.5 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | DSBGA |
| 6 | |
| Forme de sonde | Ball |
Compared to traditional transistors, CSD23203WT power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 750 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device is made with nexfet technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
Des dispositifs médicaux alimentés par l'IA
Livre blanc Arrow : conseils et informations sur l'IA pour la conception de solutions de diagnostic & thérapie rapides et sûres.