| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Triple Drain Quint Source | |
| Enhancement | |
| P | |
| 1 | |
| 8 | |
| -6 | |
| 1.1 | |
| 10 | |
| 100 | |
| 1 | |
| 12.2@4.5V | |
| 6.5@4.5V | |
| 1 | |
| 1060@4V | |
| 1500 | |
| 38 | |
| 8.4 | |
| 109 | |
| 10.4 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.8 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.28(Max) |
| Largeur du paquet | 1.5 |
| Longueur du paquet | 1.5 |
| Carte électronique changée | 9 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | DSBGA |
| 9 | |
| Forme de sonde | Ball |
Create an effective common drain amplifier using this CSD22202W15 power MOSFET from Texas Instruments. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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