| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.4 | |
| 200 | |
| 100 | |
| 1 | |
| 3.4@10V | |
| 75@10V | |
| 75 | |
| 11 | |
| 6100@50V | |
| 300000 | |
| 15 | |
| 18 | |
| 21 | |
| 9 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.7 | |
| Installation | Surface Mount |
| Hauteur du paquet | 4.7(Max) |
| Largeur du paquet | 9.25(Max) |
| Longueur du paquet | 10.26(Max) |
| Carte électronique changée | 2 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | DDPAK |
| 3 | |
| Forme de sonde | Gull-wing |
This CSD19535KTTT power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 300000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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