| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC超标 | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.4 | |
| 200 | |
| 100 | |
| 1 | |
| 3.4@10V | |
| 75@10V | |
| 75 | |
| 11 | |
| 6100@50V | |
| 300000 | |
| 15 | |
| 18 | |
| 21 | |
| 9 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 2.7 | |
| Mounting | Surface Mount |
| Package Height | 4.7(Max) |
| Package Width | 9.25(Max) |
| Package Length | 10.26(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | DDPAK |
| 3 | |
| Lead Shape | Gull-wing |
This CSD19535KTTT power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 300000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
设计 AI 驱动的医疗设备
阅读 Arrow 白皮书，掌握系统设计技巧、器件推荐与 AI 洞察，助力高效、安全打造医疗方案。