| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| NexFET | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.4 | |
| -55 to 150 | |
| 100 | |
| 100 | |
| 1 | |
| 9.4@10V | |
| 27@10V | |
| 27 | |
| 4.9 | |
| 7.9 | |
| 163 | |
| 2050@50V | |
| 9.6@50V | |
| 2.2 | |
| 395 | |
| 3200 | |
| 5 | |
| 6 | |
| 16 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 7.8@10V|8.7@6V | |
| 3.2 | |
| 231 | |
| 50 | |
| 0.8 | |
| 3.9 | |
| 62 | |
| 1 | |
| 2.8 | |
| 2.4 | |
| 20 | |
| 13 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.75 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 | |
| Forme de sonde | No Lead |
If you need to either amplify or switch between signals in your design, then Texas Instruments' CSD19533Q5A power MOSFET is for you. Its maximum power dissipation is 3200 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology.
| EDA / CAD Models |
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