| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.3 | |
| 100 | |
| 100 | |
| 1 | |
| 6.4@10V | |
| 37@10V | |
| 37 | |
| 6.6 | |
| 2980@50V | |
| 3300 | |
| 5.2 | |
| 5.8 | |
| 18.4 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.7 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.75 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
This CSD19531Q5AT power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 3300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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