| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 3.3 | |
| 100 | |
| 100 | |
| 1 | |
| 6.4@10V | |
| 37@10V | |
| 37 | |
| 6.6 | |
| 2980@50V | |
| 3300 | |
| 5.2 | |
| 5.8 | |
| 18.4 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 2.7 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.75 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Texas Instruments' CSD19531Q5A power MOSFET can provide a solution. Its maximum power dissipation is 3300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology.
| EDA / CAD Models |
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