| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.2 | |
| -55 to 175 | |
| 150 | |
| 100 | |
| 1 | |
| 2.3@10V | |
| 120@10V | |
| 120 | |
| 25 | |
| 37 | |
| 525 | |
| 9380@40V | |
| 42@40V | |
| 2.1 | |
| 2260 | |
| 375000 | |
| 10 | |
| 11 | |
| 30 | |
| 19 | |
| -55 | |
| 175 | |
| Tube | |
| 2.2@6V|2@10V | |
| 400 | |
| 0.9 | |
| 4 | |
| 107 | |
| 1.1 | |
| 2.5 | |
| 2.6 | |
| 20 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.25(Max) |
| Largeur du paquet | 4.7(Max) |
| Longueur du paquet | 10.36(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 | |
| Forme de sonde | Through Hole |
Compared to traditional transistors, CSD19506KCS power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 375000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes nexfet technology.
| EDA / CAD Models |
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