| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| NexFET | |
| Enhancement | |
| N | |
| 1 | |
| 80 | |
| ±20 | |
| 3.2 | |
| -55 to 175 | |
| 150 | |
| 100 | |
| 1 | |
| 3.1@10V | |
| 76@10V | |
| 76 | |
| 11 | |
| 25 | |
| 400 | |
| 6090@40V | |
| 26@40V | |
| 2.2 | |
| 1600 | |
| 300000 | |
| 6 | |
| 16 | |
| 62 | |
| 31 | |
| -55 | |
| 175 | |
| Tube | |
| 2.6@10V|2.9@6V | |
| 400 | |
| 0.9 | |
| 4.2 | |
| 88 | |
| 1.1 | |
| 2.6 | |
| 2.8 | |
| 20 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15 |
| Largeur du paquet | 4.55 |
| Longueur du paquet | 10.16 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Make an effective common source amplifier using this CSD19505KCS power MOSFET from Texas Instruments. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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