| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.2 | |
| 200 | |
| 100 | |
| 1 | |
| 4@10V | |
| 21@4.5V|44@10V | |
| 44 | |
| 6.9 | |
| 3900@30V | |
| 200000 | |
| 21 | |
| 5 | |
| 18 | |
| 6 | |
| -55 | |
| 175 | |
| Tube | |
| 1.8 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.25(Max) |
| Largeur du paquet | 4.7(Max) |
| Longueur du paquet | 10.36(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 |
Increase the current or voltage in your circuit with this CSD18542KCS power MOSFET from Texas Instruments. Its maximum power dissipation is 200000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology.
| EDA / CAD Models |
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