| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| NexFET | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.3 | |
| -55 to 175 | |
| 100 | |
| 100 | |
| 1 | |
| 2.2@10V | |
| 20@4.5V|41@10V | |
| 41 | |
| 6.7 | |
| 8.8 | |
| 145 | |
| 3250@30V | |
| 15@30V | |
| 1.5 | |
| 622 | |
| 3100 | |
| 3 | |
| 9 | |
| 20 | |
| 6 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 400 | |
| 0.8 | |
| 82 | |
| 1 | |
| 1.9 | |
| 1.6 | |
| 20 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 6 |
| Longueur du paquet | 5 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSON-CLIP EP |
| 8 | |
| Forme de sonde | No Lead |
Increase the current or voltage in your circuit with this CSD18540Q5BT power MOSFET from Texas Instruments. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology.
| EDA / CAD Models |
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