| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 3.5 | |
| 50 | |
| 100 | |
| 1 | |
| 14@10V | |
| 14@10V | |
| 14 | |
| 2.3 | |
| 1140@30V | |
| 94000 | |
| 3.9 | |
| 3.2 | |
| 12.6 | |
| 4.5 | |
| -55 | |
| 175 | |
| Tube | |
| 3 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15 |
| Largeur du paquet | 4.55 |
| Longueur du paquet | 10.16 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 | |
| Forme de sonde | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The CSD18537NKCS power MOSFET from Texas Instruments provides the solution. Its maximum power dissipation is 79000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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