| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.4 | |
| 200 | |
| 100 | |
| 1 | |
| 2@10V | |
| 63@10V | |
| 63 | |
| 10.4 | |
| 15.7 | |
| 5090@30V | |
| 300000 | |
| 3 | |
| 3 | |
| 19 | |
| 9 | |
| -55 | |
| 175 | |
| Tube | |
| 1.9 | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15 |
| Largeur du paquet | 4.55 |
| Longueur du paquet | 10.16 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220 |
| 3 | |
| Forme de sonde | Through Hole |
This CSD18535KCS power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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