| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 2.3 | |
| 50 | |
| 100 | |
| 1 | |
| 9.8@10V | |
| 8.5@4.5V|17@10V | |
| 17 | |
| 3.5 | |
| 3.2 | |
| 1360@30V | |
| 3100 | |
| 2 | |
| 5.5 | |
| 15 | |
| 5.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.9 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.75 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common source amplifier using this CSD18534Q5AT power MOSFET from Texas Instruments. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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