| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| NexFET | |
| Enhancement | |
| N | |
| 1 | |
| 40 | |
| ±20 | |
| 2.2 | |
| 100 | |
| 100 | |
| 1 | |
| 1.2@10V | |
| 70@4.5V|150@10V | |
| 150 | |
| 17 | |
| 29 | |
| 10700@20V | |
| 3100 | |
| 11 | |
| 19 | |
| 57 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.9 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 6 |
| Longueur du paquet | 5 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSON-CLIP EP |
| 8 | |
| Forme de sonde | No Lead |
If you need to either amplify or switch between signals in your design, then Texas Instruments' CSD18509Q5BT power MOSFET is for you. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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