| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 1.9 | |
| 100 | |
| 100 | |
| 1 | |
| 0.69@10V | |
| 93@4.5V | |
| 34 | |
| 10400@15V | |
| 3200 | |
| 74 | |
| 36 | |
| 144 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.5 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 6 |
| Longueur du paquet | 5 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSON-CLIP EP |
| 8 | |
| Forme de sonde | No Lead |
Compared to traditional transistors, CSD17570Q5B power MOSFETs, developed by Texas Instruments, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 3200 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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