| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 13.5 | |
| 100 | |
| 1 | |
| 8.8@10V | |
| 6@4.5V | |
| 1.4 | |
| 1060@15V | |
| 3000 | |
| 4.3 | |
| 15.5 | |
| 11.9 | |
| 9.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.7 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.75 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Make an effective common gate amplifier using this CSD17551Q5A power MOSFET from Texas Instruments. Its maximum power dissipation is 3000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This device is made with nexfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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