| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±10 | |
| 13 | |
| 12.2@8V | |
| 2.8@4.5V | |
| 0.8 | |
| 1.2 | |
| 422@15V | |
| 3000 | |
| 3.2 | |
| 8.2 | |
| 9.8 | |
| 5.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.6 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.75 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSON-FET EP |
| 8 | |
| Forme de sonde | No Lead |
Make an effective common source amplifier using this CSD17327Q5A power MOSFET from Texas Instruments. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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