| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| 0.35um | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 10 | |
| 21 | |
| 5.1@8V | |
| 8.9@4.5V | |
| 2.1 | |
| 1200@15V | |
| 3100 | |
| 5 | |
| 11.5 | |
| 15 | |
| 6.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.3 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.75 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Amplify electronic signals and switch between them with the help of Texas Instruments' CSD17310Q5A power MOSFET. Its maximum power dissipation is 3100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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