| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| 10 | |
| 16 | |
| 7.9@8V | |
| 5.4@4.5V | |
| 1.2 | |
| 730@15V | |
| 3000 | |
| 3.1 | |
| 8.4 | |
| 10.6 | |
| 5.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1.2 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 mm |
| Largeur du paquet | 5.75 mm |
| Longueur du paquet | 4.9 mm |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
Use Texas Instruments' CSD17302Q5A power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device utilizes nexfet technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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