| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| NexFET | |
| Enhancement | |
| N | |
| 1 | |
| 25 | |
| 16 | |
| 2.3 | |
| 16 | |
| 8.5@10V | |
| 3.9@4.5V | |
| 1.1 | |
| 1.8 | |
| 14 | |
| 570@12.5V | |
| 460 | |
| 3000 | |
| 3.6 | |
| 10.7 | |
| 6.5 | |
| 6.2 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 6.8@10V|9.6@4.5V | |
| 1.9 | |
| Installation | Surface Mount |
| Hauteur du paquet | 1 |
| Largeur du paquet | 5.75 |
| Longueur du paquet | 4.9 |
| Carte électronique changée | 8 |
| Nom de lemballage standard | SON |
| Conditionnement du fournisseur | VSONP EP |
| 8 |
This CSD16410Q5A power MOSFET from Texas Instruments can not only be used for amplifying electronic signals but also for switching between electronic signals. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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