| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Triple Drain Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 12 | |
| ±10 | |
| 1.3 | |
| 3.5 | |
| 100 | |
| 1 | |
| 10.2@4.5V | |
| 8.6@4.5V | |
| 3 | |
| 1050@6V | |
| 1900 | |
| 8 | |
| 11 | |
| 20 | |
| 7 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.28(Max) |
| Largeur du paquet | 1 |
| Longueur du paquet | 1.5 |
| Carte électronique changée | 6 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | DSBGA |
| 6 | |
| Forme de sonde | Ball |
Make an effective common source amplifier using this CSD13306WT power MOSFET from Texas Instruments. Its maximum power dissipation is 1900 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes nexfet technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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