| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Triple Drain Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 12 | |
| ±8 | |
| 1.2 | |
| 3.5 | |
| 100 | |
| 1 | |
| 20@4.5V | |
| 3.9@4.5V | |
| 0.4 | |
| 550@6V | |
| 1650 | |
| 3.2 | |
| 10 | |
| 14.7 | |
| 4.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 0.85 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.28(Max) mm |
| Largeur du paquet | 1 mm |
| Longueur du paquet | 1.5 mm |
| Carte électronique changée | 6 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | DSBGA |
| 6 | |
| Forme de sonde | Ball |
This CSD13303W1015 power MOSFET from Texas Instruments can be used for amplification in your circuit. Its maximum power dissipation is 1650 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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