| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 12 | |
| ±10 | |
| 1.3 | |
| 1.6 | |
| 100 | |
| 1 | |
| 17.1@4.5V | |
| 6@4.5V | |
| 2.1 | |
| 663@6V | |
| 1800 | |
| 7 | |
| 7 | |
| 17 | |
| 6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 1 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.28(Max) mm |
| Largeur du paquet | 1 mm |
| Longueur du paquet | 1 mm |
| Carte électronique changée | 4 |
| Nom de lemballage standard | BGA |
| Conditionnement du fournisseur | DSBGA |
| 4 | |
| Forme de sonde | Ball |
If you need to either amplify or switch between signals in your design, then Texas Instruments' CSD13302WT power MOSFET is for you. Its maximum power dissipation is 1800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with nexfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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