| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Si | |
| Single | |
| Depletion | |
| N | |
| 1 | |
| 350 | |
| ±20 | |
| 0.005 | |
| 14000@0.35V | |
| 300@0V | |
| 2500 | |
| -40 | |
| 85 | |
| Tape and Reel | |
| Installation | Surface Mount |
| Hauteur du paquet | 1.68 |
| Largeur du paquet | 3.51 |
| Longueur du paquet | 6.5 |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-223 |
| 4 | |
| Forme de sonde | Gull-wing |
Make an effective common gate amplifier using this CPC5602CTR power MOSFET from Ixys Corporation. Its maximum power dissipation is 2500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in depletion mode. This MOSFET transistor has a minimum operating temperature of -40 °C and a maximum of 85 °C. This device is made with dmos technology.
| EDA / CAD Models |
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