WOLFSPEED, INCC3M0045065KMOSFET
Trans MOSFET N-CH SiC 650V 49A 4-Pin(4+Tab) TO-247 Tube
Product Overview and Breakdown of Wolfspeed’s 650 V Discrete Silicon Carbide MOSFETs
Wolfspeed products set the standard for performance, ruggedness, and ease of design-in. Our engineers leverage 10 trillion hours of experience to help you develop renewable energy solutions that meet emerging efficiency standards and power your success in the marketplace. Wolfspeed extends its Silicon Carbide (SiC) technology leadership with their 3rd-Generation 650 V MOSFETs; enabling smaller, lighter, and highly efficient power conversion in an even wider range of power systems.
Applications
The C3M0045065K Silicon Carbide MOSFET is ideally suited for residential solar applications. It can reduce IGBT-based system losses by up to 40% when in PV based ESS systems 8-15 kW for buck boost battery charge/discharge. C3M0045065K can also be used as the MPPT boost switch.
Application Images
Micro and single-phase solar inverters are an integral part of the residential solar system. Using Wolfspeed Silicon Carbide MOSFETs in the residential solar inverter creates increased power density and lower switching losses. For example, by replacing traditional silicon MOSFETs with Wolfspeed Silicon Carbide in a 7 kW residential inverter, designers can achieve 0.4% higher efficiency, a significant increase in power density (3 kW/L vs. 2.5 kW/L) and an impressive 48 kHz switching frequency, a full 32 kHz higher than using silicon MOSFETs.
Wolfspeed SiC in residential solar systems enables smaller, more efficient, and power dense energy systems that make renewable energy more reliable and affordable than ever before.
Features:
- • C3MTM SiC MOSFET technology
- • Optimized package with separate driver source pin
- • 8 mm of creepage distance between drain and source
- • High blocking voltage with low on-resistance
- • High-speed switching with low capacitances
- • Fast intrinsic diode with low reverse recovery (Qrr)
- • Halogen free, RoHS compliant
Benefits:
- • Reduce switching losses and minimize gate ringing
- • Higher system efficiency
- • Reduce cooling requirements
- • Increase power density
- • Increase system switching frequency
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| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Taux de SVHC dépassant le seuil autorisé | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| SiC | |
| Single Dual Source | |
| Enhancement | |
| N | |
| 1 | |
| 650 | |
| 19 | |
| 3.6 | |
| 49 | |
| 250 | |
| 50 | |
| 60@15V | |
| 63@15V | |
| 1621@600V | |
| 176000 | |
| 6 | |
| 12 | |
| 18 | |
| 9 | |
| -40 | |
| 175 | |
| Industrial | |
| Tube | |
| Installation | Through Hole |
| Hauteur du paquet | 23.63(Max) |
| Largeur du paquet | 5.21(Max) |
| Longueur du paquet | 16.13(Max) |
| Carte électronique changée | 4 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-247 |
| 4 |
| EDA / CAD Models |
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