10-25% de reduction
onsemiBVSS84LT1GMOSFET
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | Yes |
| PPAP | Yes |
| Power MOSFET | |
| Single | |
| 0.8um to 3um | |
| Enhancement | |
| P | |
| 1 | |
| 50 | |
| ±20 | |
| 2 | |
| -55 to 150 | |
| 0.13 | |
| 10 | |
| 15 | |
| 10000@5V | |
| 2.2@10V | |
| 2.2 | |
| 36@5V | |
| 6.5@5V | |
| 0.9 | |
| 17 | |
| 225 | |
| 1.7 | |
| 9.7 | |
| 12 | |
| 3.6 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| 4700@5V | |
| 20 | |
| 0.52 | |
| 3.5 | |
| 2.2 | |
| Installation | Surface Mount |
| Hauteur du paquet | 0.94 mm |
| Largeur du paquet | 1.3 mm |
| Longueur du paquet | 2.9 mm |
| Carte électronique changée | 3 |
| Nom de lemballage standard | SOT |
| Conditionnement du fournisseur | SOT-23 |
| 3 | |
| Forme de sonde | Gull-wing |
Create an effective common drain amplifier using this BVSS84LT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 225 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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