STMicroelectronicsBUL1203EGP BJT
Trans GP BJT NPN 550V 5A 100000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant | |
| EAR99 | |
| Active | |
| EA | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Single | |
| 1 | |
| 1200 | |
| 550 | |
| 9 | |
| 1.5@0.4A@2A|1.5@1A@3A | |
| 0.5@0.2A@1A|0.7@0.4A@2A|1.5@1A@3A | |
| 5 | |
| 10@1mA@5V|10@10mA@5V|14@0.8A@3V|9@2A@5V | |
| 100000 | |
| -65 | |
| 150 | |
| Tube | |
| Industrial | |
| Installation | Through Hole |
| Hauteur du paquet | 9.15(Max) |
| Largeur du paquet | 4.6(Max) |
| Longueur du paquet | 10.4(Max) |
| Carte électronique changée | 3 |
| Onglet | Tab |
| Nom de lemballage standard | TO |
| Conditionnement du fournisseur | TO-220AB |
| 3 | |
| Forme de sonde | Through Hole |
Thanks to STMicroelectronics, your circuit can handle high levels of voltage using the NPN BUL1203E general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 100000 mW. It has a maximum collector emitter voltage of 550 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |
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